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HS-303RH-T
Data Sheet July 1999 File Number
4602.1
Radiation Hardened CMOS Dual SPDT Analog Switch
Intersil's Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The HS-303RH-T analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a channel stop) and processing (hardened gate oxide). This switch offers lowresistance switching performance for analog voltages up to the supply rails. "ON" resistance is low and stays reasonably constant over the full range of operating voltage and current. "ON" resistance also stays reasonably constant when exposed to radiation, being typically 30 pre-rad and 35 post 100kRAD(Si). Break-before-make switching is controlled by 5V digital inputs.
Features
* QML Class T, Per MIL-PRF-38535 * Radiation Performance - Gamma Dose () 1 x 105 RAD(Si) * No Latch-Up, Dielectrically Isolated Device Islands * Pin for Pin Compatible with Intersil HI-303 Series Analog Switches * Analog Signal Range 15V * Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad) * Low rON . . . . . . . . . . . . . . . . . . . . . . 60 (Max, Post Rad) * Low Operating Power . . . . . . . . . . 100A (Max, Post Rad)
Pinouts
HS1-303RH-T (SBDIP), CDIP2-T14 TOP VIEW
NC S3 D3 1 2 3 4 5 6 7 14 V+ 13 S4 12 D4 11 D2 10 S2 9 IN2 8 V-
Specifications
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HS-303RH-T are contained in SMD 5962-95813. A "hot-link" is provided from our website for downloading. www.intersil.com/spacedefense/newsafclasst.asp Intersil's Quality Management Plan (QM Plan), listing all Class T screening operations, is also available on our website. www.intersil.com/quality/manuals.asp
D1 S1 IN1 GND
HS9-303RH-T (FLATPACK) CDFP3-F14 TOP VIEW
1 NC S3 D3 D1 S1 2 3 4 5 6 7 14 13 12 11 10 9 8
V+ S4 D4 D2 S2 IN2 V-
Ordering Information
ORDERING NUMBER 5962R9581301TCC 5962R9581304TXC PART NUMBER HS1-303RH-T HS9-303RH-T TEMP. RANGE (oC) -55 to 125 -55 to 125
IN1 GND
NOTE: Minimum order quantity for -T is 150 units through distribution, or 450 units direct.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 Satellite Applications FlowTM (SAF) is a trademark of Intersil Corporation.
HS-303RH-T Functional Diagram
SBDIP TRUTH TABLE
IN N P D
LOGIC 0 1
SW1AND SW2 OFF ON
SW3 AND SW4 ON OFF
Die Characteristics
DIE DIMENSIONS: (2130m x 1930m x 279m 25.4m) 84 x 76 x 11mils 1mil METALLIZATION: Type: Al Thickness: 12.5kA 2kA SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Gold PASSIVATION: Type: Silox (SiO2) Thickness: 8kA 1kA WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 TRANSISTOR COUNT: 76 PROCESS: Metal Gate CMOS, Dielectric Isolation
Metallization Mask Layout
HS-303RH-T
S3 V+ S4
D3
D4
D1
D2
S1
S2
IN1
IN2
NC
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
2
GND
V-

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